document number: 85181 for technical questions, contact: esdprotection@vishay.com www.vishay.com rev. 1.2, 01-jul-10 1 single-line esd-protection diode in sot-23 gsot05l-v vishay semiconductors marking (example only) yyy = type code (see table below) x = date code features ? single-line esd-protection device ? esd-immunity acc. iec 61000-4-2 30 kv contact discharge 30 kv air discharge ? space saving sot-23 package ? aec-q101 qualified ?e3 - sn ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec 20512 1 20421 1 2 3 20357 yyy xx xx ordering information device name environmental status ordering code taped units per reel (8 mm tape on 7" reel) minimum order quantity gsot05l-v standard gsot05l-v-gs08 3000 15 000 green GSOT05L-V-G-08 package data device name package name type code environmental status weight molding compound flammability rating moisture sensitivity level soldering conditions gsot05l-v sot-23 05l standard 8.8 mg ul 94 v-0 msl level 1 (according j-std-020) 260 c/10 s at terminals 5lg green 8.1 mg absolute maximum ratings gsot05l-v parameter test conditions symbol value unit peak pulse current pin 3 to 1 acc. iec 61000-4-5, 8/20 s/single shot i ppm 13 a peak pulse power pin 3 to 1 acc. iec 61000-4-5, 8/20 s/single shot p pp 156 w esd immunity contact discharge acc. iec 61000-4-2; 10 pulses v esd 30 kv air discharge acc. iec 61000-4-2; 10 pulses 30 kv operating temperatur e junction temperature t j - 40 to + 150 c storage temperature t stg - 55 to + 150 c ** please see document ?vishay material category policy?: www.vishay.com/doc?99902
www.vishay.com for technical questions, contact: esdprotection@vishay.com document number: 85181 2 rev. 1.2, 01-jul-10 gsot05l-v vishay semiconductors single-line esd-prote ction diode in sot-23 bias-mode (bidirectional asymmetrical protection mode) with the gsot05l-v one signal- or data-li nes (l1) can be protected against voltage tr ansients. with pin 1 connected to ground and pin 3 connected to a signal- or data-li ne which has to be protected. as long as th e voltage level on the data- or signal-li ne is between 0 v (ground level) and the specified maximum reverse working voltage (v rwm ) the protection diode between data line and ground offers a high isolation to the ground line. the protection device behaves like an open switch. as soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode becomes conductive and shorts the transient current to grou nd. now the protection device be haves like a closed switch. the clamping voltage (v c ) is defined by the breakthrough voltage (v br ) level plus the voltage drop at the series impedance (resistance and inductance) of the protection device. any negative transient signal will be clamped accordingly. the ne gative transient current is flowing in the forward direction o f the protection diode. the low forward voltage (v f ) clamps the negative transient close to the ground level. due to the different clamping levels in forward and reverse direction the gsot05l-v clamping behaviour is bidirectional and asymmetrical (bias). note ? ratings at 25 c, ambient temperature unless otherwi se specified. bias mode (between pin 3 to 1). typical characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - esd discharge current wave form acc. iec 61000-4-2 (330 /150 pf) fig. 2 - 8/20 s peak pulse current wave form acc. iec 61000-4-5 20422 l1 1 2 3 ground bias electrical characteristics gsot05l-v parameter test conditions/remarks symbol min. typ. max. unit protection paths number of lines which can be protected n lines - - 1 lines reverse stand off voltage at i r = 1 a v rwm 5.5 6.1 7 v reverse current at v r = 5.5 v i r --1a reverse breakdown voltage at i r = 1 ma v br 66.75- v reverse clamping voltage at i pp = 1 a v c -6.99 v at i pp = i ppm = 13 a - 10 12 v forward clamping voltage at i pp = 1 a v f -11.3v at i pp = i ppm = 13 a - 2.6 3 v capacitance at v r = 0 v; f = 1 mhz c d - 100 120 pf at v r = 2.5 v; f = 1 mhz - 60 - pf 0 % 20 % 40 % 60 % 8 0 % 100 % 120 % - 10 0 10 20 30 40 50 60 70 8 0 90 100 time (ns) discharge c u rrent i esd rise time = 0.7 ns to 1 ns 53 % 27 % 20557 0 % 20 % 40 % 60 % 8 0 % 100 % 010203040 time ( s) i ppm 20 s to 50 % 8 s to 100 % 2054 8
document number: 85181 for technical questions, contact: esdprotection@vishay.com www.vishay.com rev. 1.2, 01-jul-10 3 gsot05l-v single-line esd-prot ection diode in sot-23 vishay semiconductors fig. 3 - typical capacitance c d vs. reverse voltage v r fig. 4 - typical forward current i f vs. forward voltage v f fig. 5 - typical reverse voltage v r vs. reverse current i r fig. 6 - typical peak clamping voltage v c vs. peak pulse current i pp fig. 7 - typical clamping performance at + 8 kv contact discharge (acc. iec 61000-4-2) fig. 8 - typical clamping performance at - 8 kv contact discharge (acc. iec 61000-4-2) v r ( v ) c d (pf) 21926 0 20 40 60 8 0 100 120 0123456 f = 1mhz v f ( v ) i f (ma) 21927 0.3 0.4 0.5 0.6 0.7 0. 8 0.9 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 10 2 1 pin 1 to 3 i r ( a) v r ( v ) 2192 8 0 1 2 3 4 5 6 7 8 0.01 0.1 1 10 100 1000 10 000 pin 3 to 1 i pp (a) v c ( v ) 21929 - 4 - 2 0 2 4 6 8 10 12 0246 8 10 12 14 16 pin 3 to 1 meas u red acc. iec 61000-4-5 ( 8 /20 s - w a v e form) v c positi v e s u rge negati v e s u rge t (ns) v c-esd ( v ) 21930 - 60 - 40 - 20 0 20 40 60 8 0 - 10 0 10 20 30 40 50 60 70 8 090 acc. iec 61000-4-2 + 8 k v contact discharge pin 3 to 1 pos. discharge t (ns) v c-esd ( v ) 21931 - 8 0 - 60 - 40 - 20 0 20 40 60 - 10 0 10 20 30 40 50 60 70 8 090 acc. iec 61000-4-2 - 8 k v contact discharge pin 3 to 1 neg. discharge
www.vishay.com for technical questions, contact: esdprotection@vishay.com document number: 85181 4 rev. 1.2, 01-jul-10 gsot05l-v vishay semiconductors single-line esd-prote ction diode in sot-23 fig. 9 - typical peak clamping voltage at esd contact disc harge (acc. iec 61000-4-2) package dimensions in millimeters (inches): sot-23 21932 v c-esd ( v ) v esd (k v ) - 250 - 200 - 150 - 100 - 50 0 50 100 150 200 250 0 5 10 15 20 25 30 v c-esd acc. iec 61000-4-2 contact discharge pin 3 to 1 foot print recommendation: rev. 8 - date: 23. s ept.2009 17418 document no.: 6.541-5014.01-4 0.9 (0.035) 1 (0.039) 0.9 (0.035) 1 (0.039) 1.43 (0.056) 0.45 (0.018) 0.35 (0.014) 2.8 (0.110) 3.1 (0.122) 0.45 (0.018) 0.35 (0.014) 0.45 (0.018) 0.35 (0.014) 0.1 (0.004) max. 2.35 (0.093) 2.6 (0.102) 0.175 (0.007) 0.098 (0.004) 1.15 (0.045) 0.9 (0.035) 1.20 (0.047) 0.95 (0.037) 0.95 (0.037) 2 (0.079) 0.7 (0.028) 0.9 (0.035) 0 to 8 0.2 (0.008) 0.3 (0.012) 0.5 (0.020) 0.550 ref. (0.022 ref.)
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